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PDTC114TK Datasheet(PDF) 2 Page - NXP Semiconductors

No. de pieza PDTC114TK
Descripción Electrónicos  NPN resistor-equipped transistor
PDF  8 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PDTC114TK Datasheet(HTML) 2 Page - NXP Semiconductors

  PDTC114TK Datasheet HTML 1Page - NXP Semiconductors PDTC114TK Datasheet HTML 2Page - NXP Semiconductors PDTC114TK Datasheet HTML 3Page - NXP Semiconductors PDTC114TK Datasheet HTML 4Page - NXP Semiconductors PDTC114TK Datasheet HTML 5Page - NXP Semiconductors PDTC114TK Datasheet HTML 6Page - NXP Semiconductors PDTC114TK Datasheet HTML 7Page - NXP Semiconductors PDTC114TK Datasheet HTML 8Page - NXP Semiconductors  
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1998 May 19
2
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
PDTC114TK
FEATURES
• Built-in bias resistor R1 (typ. 10 kΩ)
• Simplification of circuit design
• Reduces number of components
and board space.
APPLICATIONS
• Especially suitable for space
reduction in interface and driver
circuits
• Inverter circuit configurations
without use of an external resistor.
DESCRIPTION
NPN resistor-equipped transistor in
an SC-59 plastic package.
PNP complement: PDTA114TK.
PINNING
PIN
DESCRIPTION
1
base/input
2
emitter/ground
3
collector/output
Fig.1 Simplified outline (SC-59) and symbol.
handbook, halfpage
MAM290
Top view
2
1
3
R1
1
2
3
Fig.2
Equivalent inverter
symbol.
MGA893 - 1
1
3
2
MARKING
TYPE
NUMBER
MARKING
CODE
PDTC114TK
24
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCEO
collector-emitter voltage
open base
−−
50
V
IO
output current (DC)
−−
100
mA
ICM
peak collector current
−−
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
−−
250
mW
hFE
DC current gain
IC = 1 mA; VCE = 5 V
200
−−
R1
input resistor
7
10
13
k
Ω



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