isc N-Channel MOSFET Transistor

IXTY01N80

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS（TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0; ID=25uA

800

--

--

V

VGS(th)

Gate Threshold Voltage

VDS=25V; ID=25uA

2.0

--

4.5

V

RDS(on)

Drain-Source On-Resistance

VGS=10V; ID=0.1A

--

--

50

Ω

IGSS

Gate-Body Leakage Current

VGS= ±20V;VDS= 0

--

--

±

50

nA

IDSS

Zero Gate Voltage Drain Current

VDS=640V; VGS= 0

--

--

10

uA

VSD

Forward On-Voltage

IS=0.1mA; VGS= 0

--

--

1.5

V

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