Io = 100mA

CDBF001A

SMD Schottky Barrier Diode

SMD Schottky Barrier Diode

Parameter

Repetitive peak reverse voltage

Average forward current

Forward current , surge peak

Power Dissipation

Storage temperature

Junction temperature

Conditions

Symbol

T j

Min

-40

-40

Max

30

100

150

+125

+125

Unit

V

V

V

V

V

uA

P

F

Typ

500

Parameter

Forward voltage 1

Forward voltage 2

Forward voltage 3

Forward voltage 4

Forward voltage 5

Reverse current

Capacitance between terminals

Conditions

IF = 0.1 mA DC

IF = 1 mA DC

IF = 10 mA DC

IF = 30 mA DC

IF = 100 mA DC

F=1MHz and 10 V DC reverse voltage

Symbol

Min Typ Max

0.24

0.32

0.40

0.50

1.00

2

6

Unit

C

C

8.3 ms single half sine-wave superimposed

on rate load ( JEDEC method )

V

mA

mA

mW

Electrical Characteristics ( at TA = 25 C unless otherwise noted )

Preliminary

SMD Diodes Specialist

COMCHIP

Page 1

REV:A

QW-A1004

Features

Designed for mounting on small surface.

Extremely thin/leadless package.

Low drop-down voltage.

Majority carrier conduction.

Mechanical data

Case:

1005 (2512) Standard package ,

molded plastic.

Terminals: Gold plated, solderable per

MIL-STD-750, method 2026.

Polarity: Indicated by cathode band.

Mounting position: Any.

Weight: 0.006 gram (approximately).

0.102(2.60)

0.095(2.40)

0.020(0.50) Typ.

0.051(1.30)

0.043(1.10)

0.035(0.90)

0.027(0.70)

Dimensions in inches and (millimeter)

1005(2512)

0.012 (0.30) Typ.

0.020(0.50) Typ.