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CDBF0230R Datasheet(PDF) 1 Page - Comchip Technology

No. de pieza CDBF0230R
Descripción Electrónicos  SMD Schottky Barrier Diode
PDF  2 Pages
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Fabricante Electrónico  COMCHIP [Comchip Technology]
Página de inicio  http://www.comchiptech.com
Logo COMCHIP - Comchip Technology

CDBF0230R Datasheet(HTML) 1 Page - Comchip Technology

  CDBF0230R Datasheet HTML 1Page - Comchip Technology CDBF0230R Datasheet HTML 2Page - Comchip Technology  
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Io = 200 mA
VR = 30 Volt s
CDBF0230R
SMD Schottky Barrier Diode
SMD Schottky Barrier Diode
(Lead-free Device)
Unit
V
uA
Parameter
Forward voltage
Reverse current
Conditions
I F = 200 mA
VR = 10 V
Symbol
VF
IR
Min Typ Max
0.6
1
Electrical Characteristics ( at T A = 25 C unless otherwise noted )
Features
Designed for mounting on small surface.
Extremely thin/leadless package.
Majority carrier conduction.
Mechanical data
Case:
SOD-323F (2512) Standard
package , molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750, method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any.
Weight: 0.006 gram (approximately).
Low forward Voltage
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method )
Max
35
30
200
1
+125
+125
Typ
Min
-40
-40
Parameter
Reverse voltage
Forward current , surge peak
Storage temperature
Junction temperature
Repetitive peak reverse voltage
Average forward rectified current
Conditions
Symbol
VRRM
VR
Io
IFSM
TSTG
T j
Unit
V
V
mA
A
C
C
Maximum Rating ( at T A = 25 C unless otherwise noted )
SMD Diodes Specialist
COMCHIP
Page 1
REV:A
QW-A1028
0.102(2.60)
0.095(2.40)
0.020(0.50) Typ.
0.051(1.30)
0.043(1.10)
0.035(0.90)
0.027(0.70)
Dimensions in inches and (millimeter)
1005(2512)
0.012 (0.30) Typ.
0.020(0.50) Typ.


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