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2SC4552 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC4552 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() isc website: www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SC4552 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) · High DC Current Gain- : hFE= 100(Min)@ (VCE= 2V, IC= 3A) · Low Saturation Voltage- : VCE(sat)= 0.3V(Max)@ (IC= 8A, IB= 0.4A) · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous 15 A ICM Collector Current-Pulse 30 A IB Base Current-Continuous 7.5 A PT Total Power Dissipation @TC=25℃ 30 W Total Power Dissipation @Ta=25℃ 2.0 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ |
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