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2SC5658 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2SC5658
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  3 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC5658 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
2SC5658
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
·
DC Current Gain-
: hFE= 120(Min)@ IC= 1mA
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
150
mA
PC
Collector Power Dissipation
@ TC=25℃
100
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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