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2SB908 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2SB908
Descripción Electrónicos  Silicon PNP Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB908 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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Silicon PNP Power Transistor
2SB908
www.iscsemi.com
1
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
·
DC Current Gain-
: hFE= 2000(Min)@ IC= -1A
·
Complementary to 2SD1223
APPLICATIONS
·
Power amplifier applications
·
Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-4
A
IB
Base current
-0.4
A
PC
Total Power Dissipation
@ TC=25℃
15
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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