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PHN708 Datasheet(PDF) 9 Page - NXP Semiconductors

No. de pieza PHN708
Descripción Electrónicos  7 N-channel 80 mohm FET array enhancement mode MOS transistors
PDF  12 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PHN708 Datasheet(HTML) 9 Page - NXP Semiconductors

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1998 Mar 17
9
Philips Semiconductors
Product specification
7 N-channel 80 m
Ω FET array
enhancement mode MOS transistors
PHN708
Fig.12 Temperature coefficient of gate-source
threshold voltage as a function of junction
temperature; typical values.
VGSth at VDS =VGS; ID = 1 mA.
k
V
GSth at Tj
V
GSth at 25 ° C
--------------------------------------
=
handbook, halfpage
−75
k
1.2
1
0.8
0.6
−25
175
25
75
125
MDA795
Tj (°C)
Fig.13 Temperature coefficient of drain-source
on-resistance as a function of junction
temperature; typical values.
RDSon at:
(1) VGS = 10 V; ID = 1.5 A.
(2) VGS = 4.5 V; ID = 0.75 A.
k
R
DSon at Tj
R
DSon at 25 ° C
-----------------------------------------
=
handbook, halfpage
−75
k
1.8
1.4
1
0.6
−25
175
25
75
(1)
(2)
125
MDA796
Tj (°C)



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