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2SA2169 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA2169 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Silicon PNP Power Transistor 2SA2169 www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -250mA -- -- -0.58 V VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -250mA -- -- -1.4 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 -50 -- -- V V(BR)EBO Emitter-Base Breakdown Voltage IE= -100uA; IC= 0 -6 -- -- V ICBO Collector Cutoff Current VCB= -40V; IE= 0 -- -- -10 μ A IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -- -- -10 μ A hFE DC Current Gain IC= -1A; VCE= -2V 200 -- 560 COB Output Capacitance IE= 0; VCB= -10V; f= 1.0MHz -- 90 -- pF fT Current-Gain—Bandwidth Product IC= -1A; VCE= -5V -- 130 -- MHz |
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