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BUX86P Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza BUX86P
Descripción Electrónicos  Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUX86P Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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Silicon NPN Power Transistor
BUX86P
www.iscsemi.com
1
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V (Min)
·
DC Current Gain-
: hFE= 26(Min)@ IC= 50mA
APPLICATIONS
·
Converters
·
Switching Regulators
·
Motor Control Systems
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector- Base Voltage
800
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
0.5
A
ICM
Collector Current-Peak
1
A
PC
Collector Power Dissipation
@ TC=25℃
42
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-40~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
3
℃
/W


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