FDN360P datasheet(1/5 Pages) EVVOSEMI

No. de pieza	FDN360P

Descripción Electrónicos	P-Channel 2.5 V (D-S) MOSFET

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Fabricante Electrónico	EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]

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General Description

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

Features

Low gate charge (6.2 nC typical)

High performance trench technology for extremely low RDS(ON) .

High power version of industry Standard SOT-23 package.

higher power handling capability.

D

S

G

Absolute Maximum Ratings

TA=25

oC unless otherwise noted

Symbol

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

–30

V

VGSS

Gate-Source Voltage

±20

V

ID

Drain Current

– Continuous

(Note 1a)

–2

A

– Pulsed

–10

Power Dissipation for Single Operation

(Note 1a)

0.5

PD

(Note 1b)

0.46

W

TJ, TSTG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

250

°C/W

RθJC

Thermal Resistance, Junction-to-Case

(Note 1)

75

°C/W

SOT–23

1. GATE

2. SOURCE

3. DRAIN

Rev:2023A2

1

l

l VDS (V) = -30V

I D= -2A (VGS=10V)

l

RDS(ON)

80m

(VGS = -10V)

l

RDS(ON)

125m

(VGS = -4.5V)

l

P-Channel 2.5 V (D-S) MOSFET

FDN336

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FDN360P Datasheet(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

FDN360P Datasheet(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

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