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FDV303 Datasheet(PDF) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

No. de pieza FDV303
Descripción Electrónicos  N-Channel 25 V (D-S) MOSFET
PDF  5 Pages
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Fabricante Electrónico  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
Página de inicio  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

FDV303 Datasheet(HTML) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

  FDV303 Datasheet HTML 1Page - EVER SEMICONDUCTOR CO.,LIMITED FDV303 Datasheet HTML 2Page - EVER SEMICONDUCTOR CO.,LIMITED FDV303 Datasheet HTML 3Page - EVER SEMICONDUCTOR CO.,LIMITED FDV303 Datasheet HTML 4Page - EVER SEMICONDUCTOR CO.,LIMITED FDV303 Datasheet HTML 5Page - EVER SEMICONDUCTOR CO.,LIMITED  
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Electrical Characteristics (T
A = 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS = 0 V, ID = 250 µA
25
V
∆BV
DSS/∆TJ
Breakdown Voltage Temp. Coefficient
I
D = 250 µA, Referenced to 25
o C
26
mV /
oC
I
DSS
Zero Gate Voltage Drain Current
V
DS = 20 V, VGS = 0 V
1
µA
T
J = 55°C
10
µA
I
GSS
Gate - Body Leakage Current
V
GS = 8 V, VDS= 0 V
100
nA
ON CHARACTERISTICS (Note)
∆V
GS(th)/∆TJ
Gate Threshold Voltage Temp. Coefficient
I
D = 250 µA, Referenced to 25
o C
-2.6
mV /
oC
V
GS(th)
Gate Threshold Voltage
V
DS = VGS, ID = 250 µA
0.65
0.8
1
V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS = 4.5 V, ID = 0.5 A
28
Ω
V
GS
= 2.7 V, I
D
= 0.2 A
I
D(ON)
On-State Drain Current
V
GS = 2.7 V, VDS = 5 V
0.5
A
g
FS
Forward Transconductance
V
DS = 5 V, ID= 0.5 A
1.45
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS = 10 V, VGS = 0 V,
f = 1.0 MHz
50
pF
C
oss
Output Capacitance
28
pF
C
rss
Reverse Transfer Capacitance
9
pF
SWITCHING CHARACTERISTICS (Note)
t
D(on)
Turn - On Delay Time
V
DD = 6 V, ID = 0.5 A,
V
GS = 4.5 V, RGEN = 50 Ω
3
6
ns
t
r
Turn - On Rise Time
8.5
18
ns
t
D(off)
Turn - Off Delay Time
17
30
ns
t
f
Turn - Off Fall Time
13
25
ns
Q
g
Total Gate Charge
V
DS = 5 V, ID = 0.5 A,
V
GS = 4.5 V
1.64
2.3
nC
Q
gs
Gate-Source Charge
0.38
nC
Q
gd
Gate-Drain Charge
0.45
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
0.3
A
V
SD
Drain-Source Diode Forward Voltage
V
GS = 0 V, IS = 0.5 A (Note)
0.83
1.2
V
Note:
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
N-Channel 25 V (D-S) MOSFET
FDV303
Rev:2023A2
2
m
42



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