FDV305 datasheet(2/5 Pages) EVVOSEMI

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Electrical Characteristics

A = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Drain–Source Breakdown Voltage

VGS = 0 V,

ID = 250 µA

∆BVDSS

∆TJ

Breakdown Voltage Temperature

Coefficient

ID = 250 µA,Referenced to 25°C

mV/

°C

IDSS

Zero Gate Voltage Drain Current

VDS = 16 V,

VGS = 0 V

µA

IGSSF

Gate–Body Leakage, Forward

VGS = 12 V,

VDS = 0 V

100

IGSSR

Gate–Body Leakage, Reverse

VGS = –12 V,

VDS = 0 V

–100

On Characteristics

(Note 2)

VGS(th)

Gate Threshold Voltage

VDS = VGS,

ID = 250 µA

0.6

1.5

∆VGS(th)

∆TJ

Gate Threshold Voltage

Temperature Coefficient

ID = 250 µA,Referenced to 25°C

–3

mV/

°C

RDS(on)

Static Drain–Source

On–Resistance

VGS = 4.5 V,

ID = 0.9 A

VGS = 2.5 V,

ID = 0.7 A

Ω

ID(on)

On–State Drain Current

VGS = 4.5V,

VDS = 5 V

gFS

Forward Transconductance

VDS = 5V,

ID = 0.9 A

Dynamic Characteristics

Ciss

Input Capacitance

109

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS = 10 V,

V GS = 0 V,

f = 1.0 MHz

Switching Characteristics

(Note 2)

td(on)

Turn–On Delay Time

4.5

Turn–On Rise Time

td(off)

Turn–Off Delay Time

Turn–Off Fall Time

VDD = 10 V,

ID = 1 A,

VGS = 4.5 V,

RGEN = 6 Ω

1.4

2.8

Total Gate Charge

1.1

1.5

Qgs

Gate–Source Charge

0.26

Qgd

Gate–Drain Charge

VDS = 10 V,

ID = 0.9 A,

VGS = 4.5 V

0.26

Drain–Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain–Source Diode Forward Current

0.29

VSD

Drain–Source Diode Forward

Voltage

VGS = 0 V,

IS = 0.29 A

0.75

1.2

trr

Diode Reverse Recovery Time

7.4

Qrr

Diode Reverse Recovery Charge

IF = 0.9 A,

diF/dt = 100 A/µs

2.2

Notes:

Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2.0%

N-Channel 20 V (D-S) MOSFET

FDV305

Rev:2023A2

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