2SC4231H datasheet(1/2 Pages) ISC

No. de pieza	2SC4231H

Descripción Electrónicos	Silicon NPN Power Transistor

PDF	2 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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Silicon NPN Power Transistor

2SC4231H

www.iscsemi.com

1

DESCRIPTION

·

Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 800V(Min)

·

Fast Switching speed

APPLICATIONS

·

Electronic ballasts for fluorescent lighting

·

Switch mode power supplies

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

1200

V

VCEO

Collector-Emitter Voltage

800

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

2

A

ICM

Collector Current-Peak

4

A

IB

Base Current-Continuous

1

A

PT

Total Power Dissipation

@ TC=25℃

30

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

4.16

℃

/W

12

3

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2SC4231H Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

2SC4231H Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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