Preliminary Specifications

2.4 GHz High-Power, High-Gain Power Amplifier

SST12LP07

11

©2006 Silicon Storage Technology, Inc.

S71321-00-000

5/06

FIGURE 12: Typical Schematic for High-Power/High-Efficiency 802.11b/g Applications

50

Ω / 0–20 mil

47 pF

2.0 pF

50

Ω / 60–70 mil

10 µF

22 pF

6.8 nH

0.1 µF

Det

10 pF

1321 Schematic 1.1

Suggested operation conditions:

2. Center slug to RF ground

3. VREG = 2.85V with R1=110

Ω

* Suggested for robustness under input overdrive condition

when working with some transceivers.

47pF

0.1 µF

R2 = 50

Ω*

2

56

8

16

15

1

14

49

11

12

10

13

3

Bias Circuit

7

0.1 µF

R1 = 110

Ω

VREG

1.5 nH