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APTDF100H60G Datasheet(PDF) 2 Page - Microsemi Corporation

No. de pieza APTDF100H60G
Descripción Electrónicos  Diode Full Bridge Power Module
PDF  4 Pages
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Fabricante Electrónico  MICROSEMI [Microsemi Corporation]
Página de inicio  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTDF100H60G Datasheet(HTML) 2 Page - Microsemi Corporation

  APTDF100H60G Datasheet HTML 1Page - Microsemi Corporation APTDF100H60G Datasheet HTML 2Page - Microsemi Corporation APTDF100H60G Datasheet HTML 3Page - Microsemi Corporation APTDF100H60G Datasheet HTML 4Page - Microsemi Corporation  
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APTDF100H60G
www.microsemi.com
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF = 100A
1.6
2.0
IF = 200A
2.0
VF
Diode Forward Voltage
IF = 100A
Tj = 125°C
1.3
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR = 600V
Tj = 125°C
500
µA
CT
Junction Capacitance
VR = 600V
190
pF
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
trr
Reverse Recovery Time
IF=1A,VR=30V
di/dt = 100A/µs
Tj = 25°C
34
ns
Tj = 25°C
160
trr
Reverse Recovery Time
Tj = 125°C
220
ns
Tj = 25°C
290
Qrr
Reverse Recovery Charge
Tj = 125°C
1530
nC
Tj = 25°C
5
IRRM
Reverse Recovery Current
IF = 100A
VR = 400V
di/dt = 200A/µs
Tj = 125°C
13
A
trr
Reverse Recovery Time
100
ns
Qrr
Reverse Recovery Charge
2890
nC
IRRM
Reverse Recovery Current
IF = 100A
VR = 400V
di/dt=1000A/µs
Tj = 125°C
44
A
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
RthJC
Junction to Case Thermal Resistance
0.55
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
175
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
Torque Mounting torque
To Heatsink
M5
2.5
4.7
N.m
Wt
Package Weight
160
g



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