PI0512WS Page 2 of 8 – July 26, 2001

The WS series devices are mounted in 22-pin ceramic side-brazed dual-in-line packages that

will insert in a standard DIP socket. A diagram of the package and its pinout configuration is

seen in Figure 1.

Features

• High saturation capacitance (60pF ) for wide dynamic range.

• Wide spectral response (180-1000) for UV and IR response.

• PN junction photodiodes highly resistive to UV damage.

• Low dark current.

• Integration time from 0.52 ms to 0.6 seconds at room temperature.

• Longer integration time extended to hours by cooling.

• High linearity.

• Low power dissipation.

• Geometrical structure to enhance stability and registration.

• Standard 22-lead dual-in-line integrated-circuit package.

Sensor Characteristics

The Peripheral Imaging Corporation's self-scanned photodiodes are on 50-

µm center-to-center

spacing. Hence, their line density 20 diodes/mm and accordingly the overall die lengths of the

different arrays vary with the number of photodiodes. For example, the 256-pixel array is

12.8-mm long and the 512 pixel array is 25.6-mm long. In addition, each array has four

additional dummy, non-imaging photodiodes with two on each side. The height of the sensors is

2500 µm. Accordingly, these slit-like apertures make these sensors desirable for coupling to

monochromators and spectrographs.

Figure 2. Geometry and layout of photodiode pixels.