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ARF1500 Datasheet(PDF) 3 Page - Advanced Power Technology |
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ARF1500 Datasheet(HTML) 3 Page - Advanced Power Technology |
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3 / 4 page ![]() Table 1 - Typical Class AB Large Signal Impedance -- ARF1500 F (MHz) Zin (Ω)ZOL (Ω) 2.0 13.5 27 40 6.7-j 12 0.45 -j 2.5 0.22 -j 0.67 0.2 + j .19 7.5 -j 0.8 7.1 -j 1.7 6.1 -j 3.0 5.0 -j 3.6 Zin - Gate shunted with 25Ω IDQ = 100mA ZOL - Conjugate of optimum load for 750 Watts output at Vdd = 125V HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when in- haled. Care must be taken during handling and mounting to avoid damage to this area . These devices must never be thrown away with general industrial or domestic waste. Thermal Considerations and Package Mounting: The rated 1500W power dissipation is only avail- able when the package mounting surface is at 25 °C and the junction temperature is 200°C. The thermal resistance between junctions and case mounting surface is 0.12 °C/W. When installed, an additional thermal impedance of 0.1 °C/W between the package base and the mounting surface is typi- cal. Insure that the mounting surface is smooth and flat. Thermal joint compound must be used to reduce the effects of small surface irregularities. The heatsink should incorporate a copper heat spreader to obtain best results. The package is designed to be clamped to a heatsink. A clamped joint maintains the required mounting pressure while allowing for thermal ex- pansion of both the device and the heat sink. A simple clamp, and two 6-32 (M3.5) screws can pro- vide the minimum 125 lb required mounting force. T = 12 in-lb. Clamp Heat Sink D S S G S S D G S S S S ARF15-- BeO 1525-xx .005 .045 .250 .500 .500 1.065 .207 .207 .375 .105 typ. 1.065 D S G ARF1500 TC,CASETEMPERATURE(°C) Figure 4, Typical Threshold Voltage vs Temperature VDS,DRAIN-TO-SOURCEVOLTAGE(VOLTS) Figure 5, Typical Output Characteristics 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 -50 -25 0 25 50 75 100 125 150 0 5 10 15 6.2V 2V 2.2V 4.2V 6 5 4 3 2 1 0 8.2V 10.2V Note: Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC t1 t2 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0.5 0.1 0.3 0.7 D = 0.9 0.05 SINGLE PULSE 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULARPULSEDURATION(SECONDS) Figure 6, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration |
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