2018/8/13

p.1

EMF60P02JS

G

S

D

P-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BVDSS

-20V

RDSON (MAX.)

65m

Ω

ID

-4A

Pb-Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNIT

Gate-Source Voltage

VGS

±12

V

Continuous Drain Current

TA = 25 °C

ID

-4

A

TA = 70 °C

-2.8

Pulsed Drain Current1

IDM

-16

Power Dissipation

TA = 25 °C

PD

1.04

W

TA = 70 °C

0.66

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNIT

Junction-to-Ambient3

RθJA (T ≤ 10sec)

83

°C / W

RθJA (Steady State)

120

1Pulse width limited by maximum junction temperature.

2Duty cycle ≤ 1％

3The device mounted on a 1 in2 pad of 2 oz copper.