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DS2430A/T Datasheet(PDF) 15 Page - Dallas Semiconductor

No. de pieza DS2430A/T
Descripción Electrónicos  256-Bit 1-Wire EEPROM
PDF  16 Pages
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Fabricante Electrónico  DALLAS [Dallas Semiconductor]
Página de inicio  https://www.maximintegrated.com/en.html
Logo DALLAS - Dallas Semiconductor

DS2430A/T Datasheet(HTML) 15 Page - Dallas Semiconductor

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DS2430A
15 of 16
ABSOLUTE MAXIMUM RATINGS*
Voltage on DATA to Ground
-0.5V to +7.0V
Operating Temperature Range
-40°C to +85°C
Storage Temperature Range
-55°C to +125°C
Soldering Temperature
See J-STD-020A Specification
* This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
DC ELECTRICAL CHARACTERISTICS
(-40°C to +85°C; VPUP = 2.8V to 6.0V)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Logic 1
VIH
2.2
V
1, 6
Logic 0
VIL
-0.3
+0.8
V
1, 9
Output Logic Low @ 4mA
VOL
0.4
V
1
Output Logic High
VOH
VPUP
6.0
V
1, 2
Input Load Current (DATA pin)
IL
0.1
5
15
μ
A
3
Programming Current
IP
500
μ
A
10
CAPACITANCE
(tA = +25°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Capacitance
CD
800
pF
7
EEPROM
(VPUP = 5.0V; tA = +25°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Write/Erase Cycles
NCYCLE
100k
-
Data Retention (at 85°C)
tDR
10
years
AC ELECTRICAL CHARACTERISTICS
(-40°C to +85°C; VPUP=2.8V to 6.0V)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Time Slot
tSLOT
60
120
µs
Write 1 Low Time
tLOW1
1
15
µs
13
Write 0 Low Time
tLOW0
60
120
µs
Read Low Time
tLOWR
1
15
µs
13
Read Data Valid
tRDV
15
µs
11, 12
Release Time
tRELEASE
0
15
45
µs
Read Data Setup
tSU
1
µs
5
Recovery Time
tREC
1
µs
Reset Time High
tRSTH
480
µs
4
Reset Time Low
tRSTL
480
960
µs
8
Presence Detect High
tPDH
15
60
µs
Presence Detect Low
tPDL
60
240
µs
Programming Time
tPROG
10
ms



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