MMHS60R650RFZ

Datasheet

Aug. 2024 Revision 1.1

Magnachip Semiconductor Ltd.

2

Parameter

Symbol

Rating

Unit

Note

Drain - Source voltage

VDSS

600

V

Gate - Source voltage

VGSS

±

25

V

Continuous drain current (1)

ID

8.0

A

TC=25℃

5.0

A

TC=100℃

Pulsed drain current (2)

IDM

24.0

A

Power dissipation

PD

7.40

W

Single - pulse avalanche energy (3)

EAS

130

mJ

MOSFET dv/dt ruggedness

dv/dt

50

V/ns

Diode dv/dt ruggedness (4)

dv/dt

50

V/ns

Storage temperature

Tstg

-

55 ~150

oC

Maximum operating junction

temperature

Tj

150

oC

1)

ID limited by maximum junction temperature

2)

Pulse width tP limited by Tj,max

3)

IAS = 1.3 A

4)

ISD ≤ ID, di/dt = 500A/μs, VDS peak ≤ V(BR)DSS, VDD= 400V, Tj=25oC

Parameter

Symbol

Value

Unit

Thermal resistance, junction-case max(5)

RthJC

16.9

oC/W

Thermal resistance, junction-ambient max(6)

RthJA

84.3

oC/W

5)

From junction to case (solder point)

6)

Device mounted on copper area for drain connection and cooling.



Thermal Characteristics



Absolute Maximum Rating (Tc=25oC unless otherwise specified)