MCP3551-ESLASHMS datasheet(2/30 Pages) MICROCHIP

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MCP3550/1/3

DS21950D-page 2

1.0

ELECTRICAL

CHARACTERISTICS

1.1

Maximum Ratings*

VDD...................................................................................7.0V

All inputs and outputs w.r.t VSS .............. -0.3V to VDD + 0.3V

Difference Input Voltage ....................................... |VDD - VSS|

Output Short Circuit Current ................................. Continuous

Current at Input Pins ....................................................±2 mA

Current at Output and Supply Pins ............................±10 mA

Storage Temperature.....................................-65°C to +150°C

Ambient temp. with power applied ................-55°C to +125°C

ESD protection on all pins (HBM, MM)

............ ≥ 6kV, ≥ 400V

Maximum Junction Temperature (TJ) . .........................+150°C

† Notice: Stresses above those listed under "Maximum

Ratings" may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at

those or any other conditions above those indicated in the

operation listings of this specification is not implied. Exposure

to maximum rating conditions for extended periods may affect

device reliability.

DC CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, all parameters apply at -40°C

≤ TA ≤ +85°C, VDD = 2.7V or 5.0V.

VREF = 2.5V. VIN+ = VIN- = VCM = VREF/2. All ppm units use 2*VREF as full-scale range. Unless otherwise noted, specification

applies to entire MCP3550/1/3 family.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Noise Performance (MCP3550/1)

No Missing Codes

NMC

—

bits

At DC (Note 5)

Output Noise

—2.5

—

µVRMS

Effective Resolution

—

21.9

—

bits RMS

VREF = 5V

Noise Performance (MCP3553)

No Missing Codes

NMC

—

bits

At DC (Note 5)

Output Noise

—6

—

µVRMS

Effective Resolution

—

20.6

—

bits RMS

VREF = 5V

Conversion Times

MCP3550-50

tCONV

-1.0%

+1.0%

MCP3550-60

tCONV

-1.0%

66.67

+1.0%

MCP3551

tCONV

-1.0%

72.73

+1.0%

MCP3553

tCONV

-1.0%

16.67

+1.0%

Accuracy

Integral Non-Linearity

INL

—

±2

ppm

TA = +25°C only (Note 2)

Offset Error

VOS

-12

±3

+12

µV

TA = +25°C

—±4

—

µV

TA = +85°C

—±6

—

µV

TA = +125°C

Positive Full-Scale Error

VFS,P

-10

±2

+10

ppm

TA = +25°C only

Negative Full-Scale Error

VFS,N

-10

±2

+10

ppm

TA = +25°C only

Offset Drift

—

0.040

—

ppm/°C

Positive/Negative Full-Scale Error

Drift

—

0.028

—

ppm/°C

Note

This parameter is established by characterization and not 100% tested.

INL is the difference between the endpoints line and the measured code at the center of the quantization band.

This current is due to the leakage current and the current due to the offset voltage between VIN+ and VIN-.

Input impedance is inversely proportional to clock frequency; typical values are for the MCP3550/1 device. VREF =5V.

Characterized by design, but not tested.

Rejection performance depends on internal oscillator accuracy; see Section 4.0 “Device Overview” for more informa-

tion on oscillator and digital filter design. MCP3550/1 device rejection specifications characterized from 49 to 61 Hz.

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