GI1386 datasheet(1/2 Pages) GTM

No. de pieza	GI1386

Descripción Electrónicos	PNP EPITAXIAL SILICON TRANSISTOR

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Fabricante Electrónico	GTM [GTM CORPORATION]

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GI1386

Page: 1/2

ISSUED DATE :2005/07/25

REVISED DATE :

G

II11338866

P

P N

N P

P E

E P

P II T

T A

A X

X II A

A L

L S

S II L

L II C

C O

O N

N T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The G

I1386 is designed for low frequency applications.

Features

&Low VCE(sat) =-0.55V(Typ.) (IC/IB=-4A/-0.1A)

&Excellent DC current gain characteristics

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

6.40

6.80

G

0.50

0.70

B

5.20

5.50

H

2.20

2.40

C

6.80

7.20

J

0.45

0.55

D

7.20

7.80

K

0.45

0.60

E

2.30 REF.

L

0.90

1.50

F

0.60

0.90

M

5.40

5.80

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-55~+150

Collector to Base Voltage

VCBO

-30

V

Collector to Emitter Voltage

VCEO

-20

V

Emitter to Base Voltage

VEBO

-6

V

Collector Current

IC

-5

A

*Collector Current (Pulse)

IC

-10

A

Total Power Dissipation (TC=25 )

:

PD

20

W

Electrical Characteristics (Ta = 25 )

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-30

-

V

IC=-50uA , IE=0

BVCEO

-20

-

V

IC=-1mA, IB=0

BVEBO

-6

-

V

IE=-50uA ,IC=0

ICBO

-

-500

nA

VCB=-20V, IE=0

IEBO

-

-500

nA

VEB=-5V, IC=0

*VCE(sat)

-

-1

V

IC=-4A, IB=-0.1A

*hFE

82

-

580

VCE=-2V, IC=-0.5A

fT

-

120

-

MHz

VCE=-6V, IE=50mA, f=30MHz

Cob

-

60

-

pF

VCB=-20V, IE=0, f=1MHz

* Pulse Test: Pulse Width 380 s, Duty Cycle 2%

Classification Of hFE

Rank

P

Q

R

E

Range

82 - 180

120 - 270

180 - 390

370 - 580

TO-251

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