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ADBMS2950BCCSZ Datasheet(PDF) 6 Page - Analog Devices

No. de pieza ADBMS2950BCCSZ
Descripción Electrónicos  Battery Pack Monitor
PDF  97 Pages
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Fabricante Electrónico  AD [Analog Devices]
Página de inicio  http://www.analog.com
Logo AD - Analog Devices

ADBMS2950BCCSZ Datasheet(HTML) 6 Page - Analog Devices

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ADBMS2950B
Data Sheet
Rev. 0 | Page 6 of 97
Parameter
Min
Typ
Max
Unit
Test Conditions/Comments
0V ≤ Vx ≤ 2.5V
−15
±1
+15
nA
Pin voltage referred to the SGND, current into pin. All Vx pins except
V4
0V ≤ Vx ≤ 2.5V
−80
±1
+80
nA
Pin V4 only
−0.1V ≤ Vx ≤ 0V
−400
±1
+400
nA
DIAGNOSTICS
Open-Wire Test Current
8
10
12
µA
Input Series Resistance
1.84
2.3
2.76
kΩ
VREF2
For more details, see the VBxADC and VxADC Transfer Function
section
V1ADC
12455
12500
12545
LSBs
V2ADC
−14759
−14706
−14653
LSBs
1
The TME specifications include the ADC's offset, nonlinearity, drift over temperature (gain error), reflow soldering, lifetime, and thermal hysteresis.
Table 6. AUX ADC
Parameter
Min
Typ
Max
Unit
Test Conditions/Comments
CHARACTERISTICS
Conversion Time
1.9
2.12
2.33
ms
All 8-channels converted
Input Sampling Frequency
3.7
4.1
4.5
MHz
Resolution
VDIV
100
µV
EPAD
100
µV
VREF1P25
100
µV
VDIG
240
µV
VDD
1
mV
TMP1
16.18
mK
VREG
240
µV
TMP2
48.7
mK
PERFORMANCE
TME1
VDIV
±5.0
mV
EPAD
-3
+1
mV
VREF1P25
±0.1
%
VDIG
±0.5
%
VDD
±0.5
%
TMP1
±5
°C
Ambient Temperature (TA) = 25°C
TMP1
±8 (±5σ)
°C
−40°C to 125°C, not tested in production
VREG
±0.5
%
TMP2
±7
°C
−40°C to 125°C, not tested in production
1
The TME specifications include the ADC's offset, nonlinearity, drift over temperature (gain error), reflow soldering, lifetime, and thermal hysteresis.



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