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ISSUED DATE :2004/12/13

REVISED DATE :

G

S

E

V O L T A G E 7 5 V, C U R R E N T 0 . 2 A

Description

The GSMBD4148 is designed for high-speed switching application in hybrid thick and thin-film circuits. The devices is manufactured by the

silicon epitaxial planar process and packed in plastic surface mount package.

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.80

1.10

L1

0.42 REF.

A1

0

0.10

L

0.15

0.35

A2

0.80

1.00

b

0.25

0.40

D

1.80

2.20

c

0.10

0.25

E

1.15

1.35

e

0.65 REF.

HE

1.80

2.40

Q1

0.15 BSC.

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-65 ~ +150

Maximum Peak Reverse Voltage

100

V

Maximum Reverse Voltage

75

V

Average Forward Current

200

mA

Surge Current(1us)

2

A

Typical Junction Capacitance between Terminal (Note 1)

4.0

pF

Maximum Reverse Recovery Time (Note2)

4.0

nSec

Total Power Dissipation

225

mW

Electrical Characteristics at Ta = 25 ::::

Characteristic

Symbol

Min.

Max.

Unit

Test Conditions

Forward Voltage

VF

-

1

V

IF=10mA

Reverse Breakdown

VR

100

-

V

IR=100uA

Reverse Current

IR

-

5

uA

VR=75V

Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 0 volt.

2. Measured at applied forward current of 10mA, reverse current of 1.0mA, Reverse voltage of 6.0volt and RL=100

ß .

3. ESD sensitive product handling required.