GSMBTA06 datasheet(1/2 Pages) GTM

No. de pieza	GSMBTA06

Descripción Electrónicos	NPN SILICON TRANSISTOR

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Fabricante Electrónico	GTM [GTM CORPORATION]

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GSMBTA06

Page: 1/2

ISSUED DATE :2005/08/31

REVISED DATE :

G

G S

S M

M B

B T

TA

A0066

N

N P

P N

N S

S II L

L II C

C O

O N

N T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The GSMBTA06 is designed for general purpose amplifier applications.

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.80

1.10

L1

0.42 REF.

A1

0

0.10

L

0.15

0.35

A2

0.80

1.00

b

0.25

0.40

D

1.80

2.20

c

0.10

0.25

E

1.15

1.35

e

0.65 REF.

HE

1.80

2.40

Q1

0.15 BSC.

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-55~+150

Collector to Base Voltage

VCBO

80

V

Collector to Emitter Voltage

VCEO

80

V

Emitter to Base Voltage

VEBO

4

V

Collector Current

IC

500

mA

Total Power Dissipation

PD

225

mW

Electrical Characteristics(Ta = 25 : ,unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

80

-

V

IC=100uA, IE=0

BVCEO

80

-

V

IC=1mA, IB=0

BVEBO

4

-

V

IE=100uA, IC=0

ICBO

-

100

nA

VCB=80V, IE=0

ICEO

-

100

nA

VCE=80V, IB=0

*VCE(sat)

-

250

mV

IC=100mA, IB=10mA

*VBE(on)

-

1.2

V

VCE=1V, IC=100mA

*hFE1

50

-

VCE=1V, IC=10mA

*hFE2

50

-

VCE=1V, IC=100mA

fT

100

-

MHz

VCE=2V, IC=10mA, f=100MHz

* Pulse Test: Pulse Width 380 s, Duty Cycle 2%

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