GSMBTA13 datasheet(1/2 Pages) GTM

No. de pieza	GSMBTA13

Descripción Electrónicos	NPN EPITAXIAL PLANAR TRANSISTOR

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Fabricante Electrónico	GTM [GTM CORPORATION]

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GSMBTA13

Page: 1/2

ISSUED DATE :2005/08/31

REVISED DATE :2006/05/10B

G

G S

S M

M B

B T

TA

A1133

N

N P

P N

N E

E P

P II T

T A

A X

X II A

A L

L P

P L

L A

A N

N A

A R

R T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The GSMBTA13 is designed for Darlington amplifier applications.

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.80

1.10

L1

0.42 REF.

A1

0

0.10

L

0.15

0.35

A2

0.80

1.00

b

0.25

0.40

D

1.80

2.20

c

0.10

0.25

E

1.15

1.35

e

0.65 REF.

HE

1.80

2.40

Q1

0.15 BSC.

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

:

Storage Temperature

Tstg

-55~+150

:

Collector to Base Voltage

VCBO

30

V

Collector to Emitter Voltage

VCEO

30

V

Emitter to Base Voltage

VEBO

10

V

Collector Current

IC

500

mA

Total Power Dissipation

PD

225

mW

Electrical Characteristics (Ta = 25 : unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

30

-

V

IC=100uA, IE=0

BVCEO

30

-

V

IC=100uA, IB=0

BVEBO

10

-

V

IE=10uA, IC=0

ICBO

-

100

nA

VCB=30V, IE=0

IEBO

-

100

nA

VEB=10V, IC=0

*VCE(sat)

-

1.5

V

IC=100mA, IB=0.1mA

*VBE(on)

-

2.0

V

VCE=5V, IC=100mA

*hFE1

5K

-

VCE=5V, IC=10mA

*hFE2

10K

-

VCE=5V, IC=100mA

fT

125

-

MHz

VCE=5V, IC=10mA, f=100MHz

Cob

-

6

pF

VCB=10V, IE=0, f=1MHz

* Pulse Test: Pulse Width 380 s, Duty Cycle 2%

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