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STF80N240K6 Datasheet(PDF) 4 Page - STMicroelectronics

No. de pieza STF80N240K6
Descripción Electrónicos  N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a TO-220FP package
PDF  13 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF80N240K6 Datasheet(HTML) 4 Page - STMicroelectronics

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Table 7. Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD(1)
Source-drain current
-
16
A
ISDM(2)
Source-drain current (pulsed)
-
35
A
VSD(3)
Forward on voltage
ISD = 14 A, VGS = 0 V
-
1.5
V
trr
Reverse recovery time
ISD = 14 A, di/dt = 100 A/µs,
VDD = 60 V
(see Figure 19. Test circuit for inductive
load switching and diode recovery times)
-
335
ns
Qrr
Reverse recovery charge
-
5.4
µC
IRRM
Reverse recovery current
-
27.5
A
trr
Reverse recovery time
ISD = 14 A, di/dt = 100 A/µs,
VDD = 60 V, TJ = 150 °C
(see Figure 19. Test circuit for inductive
load switching and diode recovery times)
-
430
ns
Qrr
Reverse recovery charge
-
7.4
µC
IRRM
Reverse recovery current
-
28
A
1. Limited by package.
2. Pulse width limited by safe operating area.
3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
STF80N240K6
Electrical characteristics
DS13794 - Rev 3
page 4/13



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