P4C147-20LSMB datasheet(4/10 Pages) PYRAMID

No. de pieza	P4C147-20LSMB

Descripción Electrónicos	ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM

PDF	10 Pages

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Fabricante Electrónico	PYRAMID [Pyramid Semiconductor Corporation]

Página de inicio	http://www.pyramidsemiconductor.com

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P4C147

Page 4 of 10

Document # SRAM103 REV A

Notes:

9. CE and WE must be LOW for WRITE cycle.

10. If CE goes HIGH simultaneously with WE high, the output remains

in a high impedance state.

-10

TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WE

WE CONTROLLED)(9)

TIMING WAVEFORM OF WRITE CYCLE NO. 2 (CE

CE CONTROLLED)(9)

Sym.

Parameter

Chip Enable Time to End of Write

Address Valid to End of Write

Address Set-up Time

Write Pulse Width

Address Hold Time from

End of Write

Data Valid to End of Write

Data Hold Time

Write Enable to Output in High Z

Output Active from End of Write

Min

Max

-12

Min

Max

-15

Min

Max

-20

Min

Max

-25

Min

Max

AC CHARACTERISTICS—WRITE CYCLE

CC = 5V ± 10%, All Temperature Ranges)

(2)

-35

Min

Max

Unit

Write Cycle Time

11. Write Cycle Time is measured from the last valid address to the first

transition address.

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