CYIS1SM0250-AA
Document Number: 38-05713 Rev. *B
Page 2 of 24
Specifications
General Specifications
Electro-optical Specifications
Overview
Table 1. General Specifications
Parameter
Specification
Remarks
Pixel Architecture
3-transistor active pixel
4 diodes per pixel
Radiation-tolerant pixel design
4 photodiodes for improved MTF
Pixel Size
25 x 25
µm2
Resolution
512 by 512 pixels
Pixel Rate
8 Mps
Shutter Type
Electronic
Integration time is variable in time, steps equal to the row
readout time
Frame Rate
29 full frames/second
Extended dynamic range
Double slope
Programmable gain
Programmable between x1, x2, x4, x8
Selectable through pins G0 and G1
Supply voltage VDD
5V
Operational temperature
range
0°C - +65°C
STAR250 (Quartz glass lid, air in cavity)
-40°C - +85°C
STAR250BK7 (BK7G18 glass lid, N2 in cavity)
Package
84 pins JLCC
Table 2. Electro-optical Specifications
Parameter
Specification (all typical)
Comment
Detector Technology
CMOS Active Pixel Sensor
Pixel Structure
3-transistor active pixel
4 diodes per pixel
Radiation-tolerant pixel design
4 Photodiodes for improved MTF
Photodiode
High fill factor photodiode
Sensitive Area Format
512 by 512 pixels
Pixel Size
25 x 25
µm2
Spectral Range
200 - 1000 nm
See curves
Quantum Efficiency x Fill
Factor
Max. 35%
Above 20% between 450 and 750 nm
(Note: Metal FillFactor (MFF) is 63%)
Full Well Capacity
311K electrons
When output amplifier gain = 1
Linear Range within + 1%
128K electrons
When output amplifier gain = 1
Output Signal Swing
1.68 V
When output amplifier gain = 1
Conversion Gain
5.7
µV/e-
When output amplifier gain = 1 near dark
Temporal Noise
76 e-
Dominated by kTC
Dynamic Range
74 dB (5000:1)
At the analog output
[+] Feedback
[+] Feedback
Mexican ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
