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PIC16F72 Datasheet(PDF) 11 Page - Microchip Technology

No. de pieza PIC16F72
Descripción Electrónicos  FLASH Memory Programming Specification
PDF  14 Pages
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Fabricante Electrónico  MICROCHIP [Microchip Technology]
Página de inicio  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

PIC16F72 Datasheet(HTML) 11 Page - Microchip Technology

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 2002 Microchip Technology Inc.
Preliminary
DS39588A-page 11
PIC16F72
5.0
PROGRAM/VERIFY MODE ELECTRICAL CHARACTERISTICS
5.1
AC/DC Characteristics
TABLE 5-1:
TIMING REQUIREMENTS FOR PROGRAM/VERIFY MODE
Standard Operating Conditions (unless otherwise stated)
Operating Temperature:
+10°C
≤ TA ≤ +40°C
Operating Voltage:
4.5V
≤ VDD ≤ 5.5V
Characteristics
Sym
Min
Typ
Max
Units
Conditions/Comments
General
VDD level for read and verification
VDD
2.0
5.5
V
VDD level for programming and
erasing
VDDP
4.75
5.25
V
High voltage on MCLR for chip erase
and program write operations
VPP
12.75
13.25
V
(Notes 1, 2)
MCLR rise time (VSS to VPP) for Test
mode entry
tVHHR
1.0
µs
(RB6, RB7) input high level
VIH10.8 VDD
V
Schmitt Trigger input
(RB6, RB7) input low level
VIL10.2 VDD
V
Schmitt Trigger input
Serial Program/Verify
Data in setup time before clock
tset1
100
ns
Data in hold time after clock
thld1
100
ns
Data input not driven to next clock input
(delay required between
command/data or command/command)
tdly1
1.0
µs
Delay between clock
↓ to clock↑ of next
command or data
tdly2
1.0
µs
Clock
↑ to data out valid (during read
data)
tdly3
200
ns
Erase cycle time
tera
30
ms
(Note 3)
Programming cycle time
tprog
1
3(4)
ms
Note 1: VPP should be current limited to about 100 mA.
2: VPP must remain above VDDP + 4.0V to remain in Programming mode, while not actually erasing or
programming.
3: The chip erase is self-timed.
4: tprog is expected to be reduced to 1 ms max.



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