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PIC16F72 Datasheet(PDF) 11 Page - Microchip Technology |
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PIC16F72 Datasheet(HTML) 11 Page - Microchip Technology |
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11 / 14 page ![]() 2002 Microchip Technology Inc. Preliminary DS39588A-page 11 PIC16F72 5.0 PROGRAM/VERIFY MODE ELECTRICAL CHARACTERISTICS 5.1 AC/DC Characteristics TABLE 5-1: TIMING REQUIREMENTS FOR PROGRAM/VERIFY MODE Standard Operating Conditions (unless otherwise stated) Operating Temperature: +10°C ≤ TA ≤ +40°C Operating Voltage: 4.5V ≤ VDD ≤ 5.5V Characteristics Sym Min Typ Max Units Conditions/Comments General VDD level for read and verification VDD 2.0 5.5 V VDD level for programming and erasing VDDP 4.75 5.25 V High voltage on MCLR for chip erase and program write operations VPP 12.75 13.25 V (Notes 1, 2) MCLR rise time (VSS to VPP) for Test mode entry tVHHR 1.0 µs (RB6, RB7) input high level VIH10.8 VDD V Schmitt Trigger input (RB6, RB7) input low level VIL10.2 VDD V Schmitt Trigger input Serial Program/Verify Data in setup time before clock ↓ tset1 100 ns Data in hold time after clock ↓ thld1 100 ns Data input not driven to next clock input (delay required between command/data or command/command) tdly1 1.0 µs Delay between clock ↓ to clock↑ of next command or data tdly2 1.0 µs Clock ↑ to data out valid (during read data) tdly3 200 ns Erase cycle time tera 30 ms (Note 3) Programming cycle time tprog 1 — 3(4) ms Note 1: VPP should be current limited to about 100 mA. 2: VPP must remain above VDDP + 4.0V to remain in Programming mode, while not actually erasing or programming. 3: The chip erase is self-timed. 4: tprog is expected to be reduced to 1 ms max. |
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