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AS6C2008 Datasheet(PDF) 7 Page - Alliance Semiconductor Corporation |
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AS6C2008 Datasheet(HTML) 7 Page - Alliance Semiconductor Corporation |
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7 / 13 page ![]() Rev. 1.1 256K X 8 BIT LOW POWER CMOS SRAM DATA RETENTION CHARACTERISTICS PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCC for Data Retention VDR CE# V ≧ CC - 0.2V or CE2 ≦ 0.2V 1.5 - 3.6 V - - IDR VCC = 1.5V CE# V ≧ CC - 0.2V or CE2 ≦ 0.2V -I* - 0.5 10 µA Chip Disable to Data Retention Time tCDR See Data Retention Waveforms (below) 0 - - ns Recovery Time tR tRC* - - ns tRC* = Read Cycle Time **I= Industrial temperature DATA RETENTION WAVEFORM Data Retention Current I Low Vcc Data Retention Waveform (1) (CE# controlled) Vcc CE# VDR ≧ 1.5V CE# V ≧ cc-0.2V Vcc(min.) VIH tR tCDR VIH Vcc(min.) Low Vcc Data Retention Waveform (2) (CE2 controlled) Vcc CE2 VDR ≧ 1.5V CE2 ≦ 0.2V Vcc(min.) VIL tR tCDR VIL Vcc(min.) ® February 2007 AS6C2008 10/February/07, v.1.0 Alliance Memory Inc. Page 7 of 13 |
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