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SS29 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

No. de pieza SS29
Descripción Electrónicos  2.0 AMPS. Surface Mount Schottky Barrier Rectifiers
PDF  2 Pages
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Fabricante Electrónico  TSC [Taiwan Semiconductor Company, Ltd]
Página de inicio  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

SS29 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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- 54 -
.082(2.08)
.076(1.93)
.012(.31)
.006(.15)
.012(.31)
.006(.15)
.008(.20)
.004(.10)
.056(1.41)
.035(0.90)
.147(3.73)
.137(3.48)
.187(4.75)
.167(4.25)
.103(2.61)
.078(1.99)
.208(5.28)
.200(5.08)
SS22 THRU SS210
2.0 AMPS. Surface Mount Schottky Barrier Rectifiers
Voltage Range
20 to 100 Volts
Current
2.0 Amperes
Features
For surface mounted application
Metal to silicon rectifier, majority carrier conduction
Low forward voltage drop
Easy pick and place
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Epitaxial construction
High temperature soldering:
260
oC / 10 seconds at terminals
Mechanical Data
Case: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packaging: 12mm tape per EIA STD RS-481
Weight: 0.093gram
SMB/DO-214AA
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
SS
22
SS
23
SS
24
SS
25
SS
26
SS
29
SS
210
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
90
100
V
Maximum RMS Voltage
VRMS
14
21
28
35
42
63
70
V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
90
100
V
Maximum Average Forward Rectified Current
at TL(See Fig. 1)
I(AV)
2.0
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
IFSM
50
A
Maximum Instantaneous Forward Voltage
(Note 1) @ 2.0A
VF
0.5
0.70
0.85
V
0.4
0.1
Maximum DC Reverse Current @ TA =25
at Rated DC Blocking Voltage @ TA=100
IR
20
10.0
20
mA
mA
Typical Junction Capacitance (Note 3)
Cj
130
pF
Typical Thermal Resistance ( Note 2 )
R
θJL
R
θJA
17
75
℃/W
℃/W
Operating Temperature Range
TJ
-65 to +125
-65 to +150
Storage Temperature Range
TSTG
-65 to +150
Notes
: 1. Pulse Test with PW=300 usec, 1% Duty Cycle
2. Measured on P.C.Board with 0.4 x 0.4”(10 x 10mm) Copper Pad Areas.
3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.


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