BYVF32-200 datasheet(1/2 Pages) ISC

No. de pieza	BYVF32-200

Descripción Electrónicos	Ultrafast Rectifier Diode

PDF	2 Pages

Scroll/Zoom	100%

Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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Ultrafast Rectifier Diode

BYVF32-200

www.iscsemi.com

1

FEATURES

· High thermal cycling performance

· Low on-state losses

· Low thermal resistance

· Soft recovery characteristic

APPLICATIONS

· Switched mode power supplies

· Power Factor Correction (PFC) for Interleaved Topology

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VRRM

Peak Reverse voltage

200

V

IF(AV)

Average Rectified Forward Current

δ

= 0.5 ; TC ≤ 125°C;

18

A

IFSM

Non-repetitive Peak Surge Current

tp=10ms,sinusoidal，per diode

150

A

TJ

Max.Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

Per diode

5.0

℃

/W

12

3

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BYVF32-200 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

BYVF32-200 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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