Nexperia

PDTC124XM

50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB = 50 V; IE = 0 A; Tamb = 25 °C

-

-

100

nA

VCE = 30 V; IB = 0 A; Tamb = 25 °C

-

-

100

nA

ICEO

collector-emitter cut-off

current

VCE = 30 V; IB = 0 A; Tj = 150 °C

-

-

5

µA

IEBO

emitter-base cut-off

current

VEB = 5 V; IC = 0 A; Tamb = 25 °C

-

-

120

µA

hFE

DC current gain

VCE = 5 V; IC = 5 mA; Tamb = 25 °C

80

-

-

VCEsat

collector-emitter

saturation voltage

IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C

-

-

150

mV

VI(off)

off-state input voltage

VCE = 5 V; IC = 100 µA; Tamb = 25 °C

-

0.8

0.5

V

VI(on)

on-state input voltage

VCE = 300 mV; IC = 2 mA; Tamb = 25 °C

2

1.1

-

V

R1

bias resistor 1 (input)

15.4

22

28.6

kΩ

R2/R1

bias resistor ratio

Tamb = 25 °C

1.7

2.1

2.6

Cc

collector capacitance

VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;

Tamb = 25 °C

-

-

2.5

pF

IC (mA)

10- 1

102

10

1

006aaa174

102

10

103

hFE

1

(1)

(2)

(3)

VCE = 5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig. 1. DC current gain as a function of collector

current; typical values

IC (mA)

1

102

10

006aaa175

102

103

VCEsat

(mV)

10

(1)

(2)

(3)

IC/IB = 20

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig. 2. Collector-emitter saturation voltage as a

function of collector current; typical values

PDTC124XM

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Product data sheet

23 October 2024

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