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TN2529 Datasheet(PDF) 3 Page - Supertex, Inc

No. de pieza TN2529
Descripción Electrónicos  Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET
PDF  4 Pages
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Fabricante Electrónico  SUTEX [Supertex, Inc]
Página de inicio  http://www.supertex.com
Logo SUTEX - Supertex, Inc

TN2529 Datasheet(HTML) 3 Page - Supertex, Inc

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TN2529
Electrical Characteristics (T
A = 25°C unless otherwise specified)
Symbol
Parameter
Min
Typ
Max
Units
Conditions
BV
DSS
Drain-to-source breakdown voltage
290
-
-
V
V
GS = 0V, ID = 2.0mA
V
GS(th)
Gate threshold voltage
0.6
-
2.0
V
V
GS = VDS, ID = 1.0mA
ΔV
GS(th)
V
GS(th) change with temperature
-
-
-5.0
mV/OCV
GS = VDS, ID = 1.0mA
I
GSS
Gate body leakage current
-
-
100
nA
V
GS = ±20V, VDS = 0V
I
DSS
Zero gate voltage drain current
-
-
10
µA
V
GS = 0V, VDS = Max rating
-
-
1.0
mA
V
DS = 0.8 Max Rating,
V
GS = 0V, TA = 125
OC
I
D(ON)
ON-state drain current
0.5
1.9
-
A
V
GS = 4.5V, VDS = 25V
1.0
2.8
-
V
GS = 10V, VDS = 25V
R
DS(ON)
Static drain-to-source ON-state
resistance
-
4.0
6.0
Ω
V
GS = 4.5V, ID = 250mA
-4.0
6.0
V
GS = 10V, ID = 500mA
ΔR
DS(ON)
Change in R
DS(ON) with temperature
-
-
1.4
%/OCV
GS = 10V, ID = 500mA
G
FS
Forward transconductance
300
600
-
mmho
V
DS = 25V, ID = 500mA
C
ISS
Input capacitance
-
65
125
pF
V
GS = 0V,
V
DS = 25V,
f = 1.0MHz
C
OSS
Common source output capacitance
-
35
70
C
RSS
Reverse transfer capacitance
-
10
25
t
d(ON)
Turn-ON delay time
-
-
10
ns
V
DD = 25V,
I
D = 1.0A,
R
GEN = 25Ω
t
r
Rise time
-
-
10
t
d(OFF)
Turn-OFF delay time
-
-
20
t
f
Fall time
-
-
20
V
SD
Diode forward voltage drop
-
-
1.8
V
V
GS = 0V, ISD = 1.0A
t
rr
Reverse recovery time
-
300
-
ns
V
GS = 0V, ISD = 1.0A
Notes:
1.All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.



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