BSS8402DWTSLASHR7-R datasheet(2/6 Pages) PANJIT

2 / 6 page

V = 10V, I = 0.2A

V = ±20V, V = 0V

www.panjit.com

9/15/2005

Page 2

Electrical Characteristics - N-CHANNEL - Q , 2N7002

Parameter

Symbol

Min

Units

Drain-Source Breakdown Voltage

T = 25°C Unless otherwise noted

Conditions

Typ

Max

BVDSS D

I = 10µA, V = 0V

Zero Gate Voltage Drain Current

I DSS V = 60V, V = 0

Gate-Body Leakage

1.0

500

µA

±10

BSS8402DW

OFF CHARACTERISTICS (Note 2)

I GSS

T =125°C

Parameter

Symbol

Min

Units

Gate Threshold Voltage

Conditions

Typ

Max

VGS(th) DS

V = V , I = 250µA

Forward Transconductance

1.0

1.6

2.5

ON CHARACTERISTICS (Note 2)

g FS

0.08

Static Drain-Source On-ResistanceRDS(ON)

V = 5V, I = 0.05A

1.8

4.5

Parameter

Symbol

Min

Units

Input Capacitance

Conditions

Typ

Max

Ciss

Reverse Transfer Capacitance

DYNAMIC CHARACTERISTICS

Crss

5.0

Output Capacitance

Coss

V = 25V,

V = 0V,

f = 1.0MHz

Parameter

Symbol

Min

Units

Turn-On Delay Time

Conditions

Typ

Max

t D(ON)

SWITCHING CHARACTERISTICS

Turn-Off Delay Time

t D(OFF)

V =30V, I =0.2A, R =150ohm

= 25ohm, V

= 10V

GEN

Note 2. Short duration test pulse used to minimize self-heating

T =25°C

V = 10V, I = 0.5A

2.0

7.0

Ohms

0.5

1.65

V = 10V, V = 7.5V

On-State Drain Current

I D(ON)

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