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STDRIVEG611Q Datasheet(PDF) 5 Page - STMicroelectronics

No. de pieza STDRIVEG611Q
Descripción Electrónicos  High voltage and high-speed half-bridge gate driver for GaN power switches
PDF  33 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STDRIVEG611Q Datasheet(HTML) 5 Page - STMicroelectronics

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Pin
N.
Name
Type
Function
12
PGND Power
Reference potential of low-side driver, to be connected to low-side GaN Kelvin source and VCCL
capacitor.
13
OUTL Output
Low-side driver output. To be connected to the low-side gate through the turn-off resistor. Sink/
source gate current flows through this pin.
14
OUT
Power
Reference potential of high-side driver, to be connected to high-side GaN Kelvin source, BOOT, and
VCCH capacitors.
15
OUTH Output
High-side driver output. To be connected to the high-side gate through the turn-off resistor. Sink/
source gate current flows through this pin.
16
RONH Output
A resistor connected between this pin and VCCH sets the turn-on resistor source current of the high-
side driver. Mounting the resistor as close as possible to the RONH pin optimizes the operation of
the driver.
17
VCCH Power
Output of linear regulator that supplies the output stage of high-side driver. A ceramic capacitor equal
or greater than 47 nF (X7R, 16 V) must be placed as close as possible between this pin and OUT.
18
BOOT Power
Supply voltage of high-side floating driver. A ceramic capacitor equal or greater than 47 nF (X7R, 50
V) must be placed as close as possible between this pin and OUT.
The input of the high-side driver regulator is internally connected to this pin.
STDRIVEG611
Pin description
DS14457 - Rev 2
page 5/33



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