TPCF8301 datasheet(4/7 Pages) TOSHIBA

No. de pieza	TPCF8301

Descripción Electrónicos	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

PDF	7 Pages

Scroll/Zoom	100%

Fabricante Electrónico	TOSHIBA [Toshiba Semiconductor]

Página de inicio	http://www.semicon.toshiba.co.jp/eng

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4 / 7 page

TPCF8301

2006-11-16

Drain-source voltage VDS (V)

ID – VDS

Drain-source voltage VDS (V)

ID – VDS

Gate-source voltage VGS (V)

ID – VGS

Gate-source voltage VGS (V)

VDS – VGS

Drain current ID (A)

|Yfs| – ID

Drain current ID (A)

RDS (ON) – ID

−1

−2

−3

−4

−5

−2

−4

−6

−8

−10

VGS = −1.5 V

−1.8

−2

−2.5

−2.8

−3

−3.5

−4

−4.5

−5

Common source

= 25°C

Pulse test

−2

−4

−6

−8

−0.2

−0.4

−0.6

−0.8

−1.0

Common source

= 25°C

Pulse test

ID = −2.7 A

−1.4 A

−0.7 A

−0.1

−1

−10

100

= −55°C

= 100°C

= 25°C

Common source

VDS = −10 V

Pulse test

−0.1

−1

−10

100

1000

−0.2

−0.4

−0.6

−0.8

−1.0

−1

−2

−3

−4

−5

VGS = −1.5 V

−1.8

−2

−2.5

−2.8

−3

−3.5

−4

−4.5

−5

Common source

= 25°C

Pulse test

−0.5

−1.0

−1.5

−2.0

−2.5

−1

−2

−3

−4

−5

= −55°C

= 100°C

= 25°C

Common source

VDS = −10 V

Pulse test

VGS = −4.5 V

−2.5 V

−1.8 V

Common source

= 25°C

Pulse test

TPCF8301 Datasheet(PDF) 4 Page - Toshiba Semiconductor

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