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TPCP8002 Datasheet(PDF) 2 Page - Toshiba Semiconductor

No. de pieza TPCP8002
Descripción Electrónicos  TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV)
PDF  7 Pages
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCP8002 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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TPCP8002
2007-01-16
2
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to ambient (t
= 5 s)
(Note 2a)
Rth (ch-a)
74.4
°C/W
Thermal resistance, channel to ambient (t
= 5 s)
(Note 2b)
Rth (ch-a)
148.8
°C/W
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: VDD = 16 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = 9.1 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature.
Note 5: ● on the lower left of the marking indicates Pin 1.
* Weekly code (3 digits):
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(the last digit of the calendar year)
(b)
FR-4
25.4
× 25.4 × 0.8t
Unit : (mm)
(a)
FR-4
25.4
× 25.4 × 0.8t
Unit : (mm)



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