STP8NM60D datasheet(2/13 Pages) STMICROELECTRONICS

No. de pieza	STP8NM60D

Descripción Electrónicos	N-CHANNEL 600V - 0.9廓 - 8A - TO-220/D2PAK Fast Diode MDmesh??Power MOSFET

PDF	13 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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Electrical ratings

STB8NM60D - STP8NM60D

2/13

Rev2

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-Source Voltage (VGS = 0)

600

VDGR

Drain-gate Voltage (RGS = 20kΩ)600

VGS

Gate-Source Voltage

±30

Drain Current (continuous) at TC = 25°C

Drain Current (continuous) at TC=100°C

IDM

(1)

Pulse width limited by safe operating area

Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

100

Derating Factor

0.8

W/°C

dv/dt(2)

ISD ≤5A, di/dt ≤400A/µs, VDD =80%V(BR)DSS

Peak Diode Recovery voltage slope

V/ns

Tstg

Operating Junction Temperature

Storage Temperature

-65 to 150

°C

Table 2.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case Max

1.25

°C/W

Rthj-amb

Thermal resistance junction-ambient Max

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

Table 3.

Avalanche data

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not

repetitive (pulse width limited by Tjmax)

2.5

EAS

Single pulse avalanche energy (starting

Tj=25°C, ID=IAR, VDD=50V)

200

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