HAF1004L datasheet(2/10 Pages) RENESAS

No. de pieza	HAF1004L

Descripción Electrónicos	Silicon P Channel MOS FET Series Power Switching

PDF	10 Pages

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Fabricante Electrónico	RENESAS [Renesas Technology Corp]

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2 / 10 page

HAF1004(L), HAF1004(S)

Rev.5.00, Apr.29.2003, page 2 of 10

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

–60

Gate to source voltage

VGSS

–16

Gate to source voltage

VGSS

2.5

Drain current

–5

Drain peak current

ID (pulse)

Note1

–10

Body-drain diode reverse drain current

IDR

–5

Cannel dissipation

Pch

Note2

Cannel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 0µs, duty cycle ≤ 1%

2. Value at Ta = 25°C

Typical Operation Characteristics

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

VIH

–3.5

—

Input voltage

VIL

—

–1.2

IIH1

—

–100

µA

Vi = –8 V, VDS = 0

IIH2

—

–50

µA

Vi = –3.5 V, VDS = 0

Input current

(Gate non shut down)

IIL

—

–1

µA

Vi = –1.2 V, VDS = 0

IIH(sd)1

—

–0.8

—

Vi = –8 V, VDS = 0

Input current

(Gate shut down)

IIH(sd)2

—

–0.35

—

Vi = –3.5 V, VDS = 0

Shut down temperature

Tsd

—

175

—

°C

Cannel temperature

Gate operation voltage

Vop

–3.5

—

–12

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