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DF2S5.6FS Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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DF2S5.6FS Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 3 page ![]() DF2S5.6FS 2007-11-01 2 Guaranteed Level of ESD Immunity Marking Equivalent Circuit (Top View) . 6 Criterion: No damage to device elements Test Condition ESD Immunity Level IEC61000-4-2 (Contact discharge) ±30kV CT - VR 1 10 100 012 3456 f=1MHz Ta=25°C REVERSE VOLTAGE VR(V) IZ - VZ 0 0 1 10 100 012 3 4567 89 10 0.01 Ta=25°C 0.1 ZENER VOLTAGE VZ (V) |
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