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TLP830F Datasheet(PDF) 1 Page - Toshiba Semiconductor

No. de pieza TLP830F
Descripción Electrónicos  Infrared LED Phototransistor
PDF  9 Pages
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP830F Datasheet(HTML) 1 Page - Toshiba Semiconductor

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TLP830(F)
2007-10-01
1
TOSHIBA Photointerrupter Infrared LED + Phototransistor
TLP830(F)
Lead(Pb)-Free
Track "00" Sensor For Floppy Disk Drive
Detection Of Sub−Scanning Quantity By
Image Scanner
Various Position Detection Sensor
TLP830(F) is a photointerrupter which uses a
high−radiant power GaAs LED and a fast−response
Si phototransistor. The device is high resolution
with a narrow slit pitch.
• Small package: 7.4mm (H), 4.5mm (D)
• Printed wiring board direct mounting type
(with a locating pin).
• Board thickness: 1mm or less
• Short lead type enabling automated mounting
• Gap: 2mm
• High resolution: Slit width 0.15mm
• High current transfer ratio: IC/IF = 3% (min)
• Material of the package
: Polybutylene terephthalate
(UL94V−0, black color)
• Detector side is of visible light cut type.
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
IF
50
mA
Ta > 25°C
−0.33
Forward current
derating
Ta > 85°C
ΔIF / °C
−2
mA / °C
LED
Reverse voltage
VR
5
V
Collector
−emitter voltage
VCEO
35
V
Emitter
−collector voltage
VECO
5
V
Collector power dissipation
PC
75
mW
Collector power dissipation
derating (Ta > 25°C)
ΔPC / °C
−1
mW / °C
Detector
Collector current
IC
50
mA
Operating temperature range
Topr
−30~85
°C
Storage temperature range
Tstg
−40~100
°C
Soldering temperature (5 s)
Tsol
260
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
TOSHIBA
11
−11C1
Weight: 0.4 g (typ.)


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