JDP2S02ACT datasheet(1/4 Pages) TOSHIBA

No. de pieza	JDP2S02ACT

Descripción Electrónicos	UHF~VHF Band RF Switch Applications

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Fabricante Electrónico	TOSHIBA [Toshiba Semiconductor]

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JDP2S02ACT

2007-11-01

1

TOSHIBA Diode Silicon Epitaxial PIN Type

JDP2S02ACT

UHF~VHF Band RF Switch Applications

• Suitable for reducing set’s size as a result from enabling high-density

mounting due to 2-pin small packages.

• Low series resistance: rs = 1.0 Ω (typ.)

• Low capacitance: CT = 0.3 pF (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Reverse voltage

VR

30

V

Forward current

IF

50

mA

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Reverse voltage

VR

IR = 10 μA

30

⎯

V

Reverse current

IR

VR = 30 V

⎯

0.1

μA

Forward voltage

VF

IF = 50 mA

⎯

0.9

0.94

V

Capacitance(Note2)

CT

VR = 1 V, f = 1 MHz

⎯

0.3

0.4

pF

Series resistance

rs

IF = 10 mA, f = 100 MHz

⎯

1.0

1.5

Ω

Note1: Signal level when capacitance is measured. Vsig = 100 mVrms

Marking

0.6±0.05

1

2

１：Cathode

２：Anode

0.05±0.03

0.5±0.03

JEDEC

―

JEITA

―

TOSHIBA

1-1P1A

Weight: 0.00077 g(Typ.)

Unit:mm

02

Cathode

Part Number

CST2

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