JDP2S05FS

2007-11-01

1

TOSHIBA Diode Silicon Epitaxial PIN Type

JDP2S05FS

UHF~VHF Band RF Switch Applications

• Suitable for reducing set’s size as a result from enabling high-density

mounting due to 2-pin small packages.

Characteristics

Symbol

Rating

Unit

Reverse voltage

20

V

Forward current

50

mA

Power dissipation(Note:1)

Pd

150

mW

Junction temperature

150

°C

Storage temperature range

−55~150

°C

Note:

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: When mounted on glass epoxy board

board size : 20mm

× 20mm × 1.6mmt

Cu foot area : 4mm

× 4mm × 0.035mmt

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Reverse voltage

20

―

―

V

Reverse current

―

―

0.1

μA

Forward voltage

―

―

0.94

V

Capacitance(Note2)

0.21

0.32

0.42

pF

Series resistance

―

1.5

2.2

Ω

Marking

JEDEC

―

JEITA

―

TOSHIBA

1-1L1A

Weight: 0.0006 g(Typ.)

3

Unit:mm

0.6±0.05

0.2

±0.05

A

0.48

+0.02

-0.03

0.1±0.05