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RY201 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza RY201
Descripción Electrónicos  Silicon PNP Darlington Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

RY201 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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Silicon PNP Darlington Power Transistor
RY201
www.iscsemi.com
1
DESCRIPTION
·
High DC Current Gain-
: hFE = 1000(Min)@ IC= -3A
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -100V(Min)
·
Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -2.0V(Max)@ IC= -3A
= -4.0V(Max)@ IC= -5A
APPLICATIONS
·
Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
-8
A
IB
Base Current-DC
-120
mA
PC
Collector Power Dissipation
TC=25℃
65
W
Collector Power Dissipation
Ta=25℃
2
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.92
℃
/W


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