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IPZA65R018CM8 Datasheet(PDF) 3 Page - Infineon Technologies AG

No. de pieza IPZA65R018CM8
Descripción Electrónicos  MOSFET 650V CoolMOS™ CM8 Power Transistor
PDF  15 Pages
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Fabricante Electrónico  INFINEON [Infineon Technologies AG]
Página de inicio  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPZA65R018CM8 Datasheet(HTML) 3 Page - Infineon Technologies AG

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650V CoolMOS™ CM8 Power Transistor
IPZA65R018CM8
Public
Datasheet
3
Revision 2.1
https://www.infineon.com
2025‑03‑07
1   Maximum ratings
at   = 25°C, unless otherwise specified
T
Table 2      Maximum ratings
Parameter
Symbol
Values
Unit Note / Test condition
Min.
Typ.
Max.
Continuous drain current 1)
I
‑
‑
116
A
T =25°C
73
T =100°C
Pulsed drain current 2)
I
‑
‑
505
A T =25°C
Avalanche energy, single pulse
E
‑
‑
297
mJ I =6.7A; V =50V; see table 10
Avalanche energy, repetitive
E
1.48
Avalanche current, single pulse
I
‑
‑
6.7
A ‑
MOSFET dv/dt ruggedness
dv/dt
‑
‑
120
V/ns
V =0...400V
Gate source voltage (static)
V
‑20
‑
20
V static;
Gate source voltage (dynamic)
V
‑30
‑
30
V AC (f>1 Hz)
Power dissipation
P
‑
‑
521
W
T =25°C
Storage temperature
T
‑55
‑
150
°C ‑
Operating junction temperature
T
Extended operating junction 
temperature
T
150
‑
175
°C ≤50 h in the application lifetime
Mounting torque
‑
‑
‑
60
Ncm M3 and M3.5 screws
Continuous diode forward current
I
‑
‑
116
A
T =25°C
Diode pulse current 2)
I
505
Reverse diode dv/dt 3)
dv/dt
‑
‑
70
V/ns
V =0...400V,  ≤116A,  =25°C see 
I
T
table 8
Maximum diode commutation 
speed
di /dt
1300
A/μs
Insulation withstand voltage
V
‑
‑
n.a.
V
V ,  =25°C,  =1min
T
t
    Limited by T
1)
    Pulse width t  limited by T
2)
    Identical low side and high side switch with identical R
3)
j
D
C
C
D,pulse
C
AS
D
DD
AR
AS
DS
GS
GS
tot
C
stg
j
j
S
C
S,pulse
DS
SD
j
F
ISO
rms
C
j,max
p
j,max
G



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