IPZA65R025CM8 datasheet(5/15 Pages) INFINEON

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650V CoolMOS™ CM8 Power Transistor

IPZA65R025CM8

Public

Datasheet

Revision 2.1

https://www.infineon.com

2025‑03‑07

3 Electrical characteristics

at =25°C, unless otherwise specified

Table 4 Static characteristics

Parameter

Symbol

Values

Unit Note / Test condition

Min.

Typ.

Max.

Drain‑source breakdown voltage

650

‑

V =0V, =1mA

Gate threshold voltage

3.7

4.2

4.7

V = , =1.06mA

V I

Zero gate voltage drain current

‑

1.5

μA

V =650V, =0V, =25°C

151

‑

V =650V, =0V, =150°C

Gate‑source leakage current

‑

0.1

μA

V =20V, =0V

Drain‑source on‑state resistance

‑

0.021 0.025

Ω

V =10V, =40.0A, =25°C

0.046 ‑

V =10V, =40.0A, =150°C

Gate resistance

‑

Ω

f=1MHz

Table 5 Dynamic characteristics

Parameter

Symbol

Values

Unit Note / Test condition

Min.

Typ.

Max.

Input capacitance

‑

5910

‑

V =0V, =400V, =250kHz

Output capacitance

Effective output capacitance,

energy related 4)

‑

176

‑

V =0V, =0...400V

Effective output capacitance, time

related 5)

‑

1932

‑

I =constant, =0V, =0...400V

Turn‑on delay time

‑

28.4

‑

ns V =400V, =13V, =21.1A,

=1.8Ω; see table 9

Rise time

8.6

Turn‑off delay time

121.2

Fall time

5.4

is a fixed capacitance that gives the same stored energy as

while is rising from 0 to 400V

4) C

is a fixed capacitance that gives the same charging time as

while is rising from 0 to 400V

5) C

(BR)DSS

(GS)th

GS D

DSS

GSS

DS(on)

iss

oss

o(er)

o(tr)

d(on)

d(off)

o(er)

oss

o(tr)

oss

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