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IXFN106N20 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXFN106N20 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  ISFM1319 eq IXFN106N20 N-Channel MOSFET www.iscsemi.com 1 DESCRIPTION · Drain Current -ID= 106A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 20mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converter · Battery Chargers · Synchronous Rectification ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGSS Gate-Source Voltage ± 20 V ID Drain Current-continuous@ TC=25℃ 106 A IDM Pulse Drain Current 424 A PD Total Dissipation@TC=25℃ 520 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.24 ℃ /W D G S S SOT-227 package |
Número de pieza similar - IXFN106N20 |
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Descripción similar - IXFN106N20 |
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